smd type transistors 2SD999 features world standard miniature package:sot-89. low collector saturation voltage. excellent dc current gain linearity. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 5v collector current (dc) i c 1a collector current (pulse) * i c 1.5 a total power dissipation p t 2.0 w junction temperature t j 150 storage temperature t stg -55to+150 * pulse test pw 10ms, duty cycle 50%. electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =30v,i e = 0 a 100 na emitter cutoff current i ebo v eb =5.0v,i c = 0 a 100 na v ce =1.0v,i c = 100 ma 90 200 400 v ce =1.0v,i c = 1.0a 50 140 collector saturation voltage * v ce(sat) i c =1.0a,i b = 0.1a 0.21 0.4 v base saturation voltage * v be(sat) i c =1.0a,i b =0.1a 1 1.2 v base-emitter voltage * v be v ce =6.0v,i c = 10 ma 600 630 700 mv gain bandwidth product f t v ce =6.0v,i e = -10 ma 130 mhz output capacitance c ob v cb =6v,i e = 0, f = 1.0 mhz 22 pf * pulsed: pw 350 s, duty cycle 2% dc current gain * h fe h fe classification marking cm cl ck hfe 90 180 135 270 200 400 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors smd type transistors smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type product specification 4008-318-123
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